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PH9930L,115

Part No PH9930L,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 63A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 13.3nC @ 4.5V
Max Input Capacitance 1565pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 9.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1087768-PH9930L,115
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1,500
Ultra Librarian 3D Model Ultra Librarian PH9930L,115 CAD Model

Description

Product Overview: PH9930L,115

The PH9930L,115 is a state-of-the-art power MOSFET brought to you by NXP Semiconductors, a leader in the semiconductor industry. This high-performance product is designed to cater to a wide range of power applications, offering efficient power management and control within electronic circuits.

Key Features

  • Low On-Resistance: The PH9930L,115 features an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET is ideal for applications that require fast and efficient switching capabilities, such as power supplies and DC-DC converters.
  • Enhanced Thermal Performance: With its optimized package design, the PH9930L,115 ensures superior thermal performance, enabling it to operate reliably even under high-temperature conditions.
  • Robustness: The device is characterized by its robustness, offering high durability and a long operational lifespan, which is critical for industrial and automotive applications.

Applications

The versatility of the PH9930L,115 makes it suitable for a variety of applications, including:

  • DC-DC Converters
  • Power Management Systems
  • Motor Drives
  • Computing and Server Power Supplies
  • Automotive Electronics

Product Specifications

The PH9930L,115 is engineered to meet rigorous standards, providing reliable and consistent performance. Some of the key specifications include:

  • Type: N-channel TrenchMOS™ transistor
  • Drain-source voltage (V<sub>DS): 30 V
  • Continuous drain current (I<sub>D): 100 A
  • Power dissipation (P<sub>D): 110 W
  • Operating temperature range: -55°C to 175°C
  • Package: LFPAK56, also known as Power-SO8

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PH9930L,115 is no exception, undergoing rigorous testing to ensure it meets the highest standards of quality and reliability demanded by the industry.

Whether you're designing power systems for consumer electronics, automotive, or industrial applications, the PH9930L,115 from NXP is an excellent choice for your power MOSFET needs.

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