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MJF3055G

Part No MJF3055G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Silicon Power Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Maximum) 10A
Voltage - Collector Emitter Breakdown (Maximum) 90V
Vce Saturation (Maximum) @ Ib, Ic 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Maximum) 1μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 4A, 4V
Power - Max 2W
Frequency - Transition 2MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3 Full Pack
Manufacturer Package TO-220FP
Win Source Part Number 1223764-MJF3055G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name MJF3055
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MJF3055G CAD Model

Description

The ON Semiconductor MJF3055G is a high-performance NPN bipolar junction transistor (BJT) designed for a wide array of applications requiring high efficiency and reliability. This power transistor is well-suited for power amplification and switching applications, making it an excellent choice for both commercial and industrial uses.

Key Features:

  • Voltage and Current Ratings: The MJF3055G boasts a collector-emitter voltage (VCEO) of 60V and collector current (IC) of up to 10A, making it capable of handling moderate power levels in electronic circuits.
  • Power Dissipation: With a power dissipation of 75W, this transistor can efficiently manage the thermal challenges of high-power applications.
  • High DC Current Gain: A high DC current gain (hFE) allows for better amplification of the input signal, ensuring minimal signal distortion and improved performance of the final application.
  • Complementary PNP Type: The MJF3055G has a complementary PNP type, the MJF2955G, providing designers with flexibility in creating push-pull amplifier configurations.
  • TO-220 Package: Encased in a TO-220 package, it provides a good balance between thermal performance and size, making it easy to integrate into a variety of circuit designs.

Applications:

The versatility of the MJF3055G allows it to be used in numerous applications such as:

  • Power regulators and converters
  • Motor control circuits
  • Audio amplifiers
  • Switching applications
  • Relay drivers

Reliability and Quality:

ON Semiconductor is a trusted name in the industry, known for its commitment to quality and reliability. The MJF3055G transistor is no exception and is built to meet stringent standards, ensuring long-term stability and performance in your electronic projects.

Conclusion:

Whether you are designing a new power system or upgrading an existing one, the ON Semiconductor MJF3055G NPN transistor offers the efficiency, reliability, and performance needed to meet the demands of modern electronic applications. Its robust design and wide compatibility make it an ideal choice for engineers and hobbyists alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6155 $52.3100
47+ $2.1460 $100.8620
73+ $2.0790 $151.7670
100+ $2.0119 $201.1900
129+ $1.9448 $250.8792
173+ $1.7437 $301.6601
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,100 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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