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FQU4N25TU

Part No FQU4N25TU
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 3A IPAK  /  N-Channel 250 V 3A (Tc) 2.5W (Ta), 37W (Tc) Through Hole I-PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number FQU4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 70
Win Source Part Number 1173031-FQU4N25TU
Ultra Librarian 3D Model Ultra Librarian FQU4N25TU CAD Model

Description

ON Semiconductor FQU4N25TU MOSFET Overview

The ON Semiconductor FQU4N25TU is a high-performance, N-Channel QFET® MOSFET designed to deliver efficient power management and switching capabilities to a wide array of electronic applications. This component is particularly suitable for high-efficiency power supplies, motor controls, and other power conversion and management tasks where low on-resistance and high blocking voltage are critical.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 250V, the FQU4N25TU can handle high voltage applications, making it ideal for a variety of power circuits.
  • Low On-Resistance: Featuring a low on-state resistance (R<sub>DS(on)) of just 1.05Ω, this MOSFET ensures minimal power loss and heat generation during operation, enhancing the overall efficiency of the system.
  • High Continuous Drain Current: It supports a continuous drain current (I<sub>D) of up to 2.7A, allowing it to drive moderate loads with ease.
  • Fast Switching Speed: The device's fast switching speed improves performance in applications requiring quick transitions, such as switching power supplies and PWM circuits.
  • TO-251 Package: Encased in a TO-251 (IPAK) package, the FQU4N25TU offers a compact footprint while providing excellent thermal performance and mechanical robustness.
  • RoHS Compliant: This MOSFET adheres to the latest environmental standards, being RoHS compliant, which means it is manufactured without hazardous substances, making it suitable for eco-friendly products.

Applications

The versatility of the FQU4N25TU allows it to be used in various applications. Some of the common uses include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverter Circuits
  • Motor Control Systems
  • LED Lighting Drivers
  • Power Management Solutions

With its robust design and efficient performance, the ON Semiconductor FQU4N25TU MOSFET is an excellent choice for designers looking to enhance the reliability and efficiency of their power management systems.

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