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Same model may have multiple batches, images only for reference.
IXFP8N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXFP8N65X2

Part No IXFP8N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO220 / N-Channel 650 V 8A (Tc) 150W (Tc) Through Hole TO-220-3
Datasheet
IXFP8N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXFP8N65
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324595-IXFP8N65X2
Ultra Librarian 3D Model Ultra Librarian IXFP8N65X2 CAD Model

Description

The 1138239 from IXYS is an N-channel MOSFET transistor with a drain-source voltage (Vdss) of 650V and a continuous drain (Id) @ 25°C of 8A (Tc).

  • Package: TO-220-3
  • Mounting: through hole
  • Rds On (max) @ Id, Vgs: 450mOhm @ 4A, 10V
  • Vgs(th) (max) @ Id: 5V @ 250μA
  • Power Dissipation (max): 150W (Tc)
  • Gate Charge (Qg) (max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (max) @ Vds: 790 pF @ 25 V
  • Vgs (max): ±30V
  • Temperature Range - Operating: -55°C to 150°C (TJ)

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