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IRFU210PBF

Part No IRFU210PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 2.6A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 2.6A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040377-IRFU210PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFU210
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFU210PBF CAD Model

Description

The Vishay IRFU210PBF is an N-channel MOSFET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: Through-hole
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 2.6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 8.2nC @ 10V
  • Case: TO-251AA
  • Market Popularity: Popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4240 $50.8800
255+ $0.3967 $101.1585
395+ $0.3830 $151.2850
565+ $0.3557 $200.9705
735+ $0.3420 $251.3700
915+ $0.3283 $300.3945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,060 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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