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PHP160NQ08T

Part No PHP160NQ08T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 91nC @ 10V
Max Input Capacitance 5585pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 061487-PHP160NQ08T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PHP160NQ08T CAD Model

Description

Introducing the PHP160NQ08T MOSFET from NXP Semiconductors

The PHP160NQ08T is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor designed by the renowned semiconductor manufacturer, NXP Semiconductors. This device is engineered to deliver exceptional efficiency and power handling capabilities, making it an ideal solution for a wide range of power management applications.

Key Features

  • Low On-State Resistance: The PHP160NQ08T boasts a low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High-Speed Switching: With its fast switching performance, this MOSFET is suitable for high-frequency applications, reducing switching losses and improving power density.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliable operation even under high temperature conditions, contributing to a longer lifespan.
  • Standard Level Gate Drive: This MOSFET operates with standard level gate drive voltages, making it compatible with a wide range of drive circuits and simplifying design integration.

Applications

The versatility of the PHP160NQ08T MOSFET allows it to be used in various applications, including:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Battery management systems
  • Automotive applications
  • Switch mode power supplies (SMPS)

Product Specifications

The PHP160NQ08T MOSFET comes with the following specifications:

  • Drain-Source Voltage (V<sub>DS): 80V
  • Continuous Drain Current (I<sub>D): 160A
  • Power Dissipation (P<sub>D): 209W
  • R<sub>DS(on): 8.5 mΩ (typical) at V<sub>GS = 10V
  • Package: D2PAK (TO-263)

Reliability and Quality

NXP Semiconductors is committed to providing high-quality and reliable components. The PHP160NQ08T MOSFET is no exception and is manufactured to meet the highest industry standards for performance and durability. With its robust design and NXP's rigorous testing protocols, customers can trust this MOSFET to perform consistently in even the most demanding environments.

Whether you are designing power systems for consumer electronics, automotive, or industrial applications, the PHP160NQ08T from NXP Semiconductors is a solid choice that offers both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.9452 $64.7260
11+ $10.6225 $116.8475
17+ $10.2899 $174.9283
24+ $9.9584 $239.0016
30+ $9.6269 $288.8070
41+ $8.6302 $353.8382
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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