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PHP63NQ03LT

Part No PHP63NQ03LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 68.9A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 68.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.6nC @ 5V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 111W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 061493-PHP63NQ03LT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHP63NQ03LT CAD Model

Description

Introducing the NXP PHP63NQ03LT MOSFET

The NXP PHP63NQ03LT is a high-performance, N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) designed to deliver efficient power management and conversion. This robust MOSFET is part of NXP's acclaimed TrenchMOS portfolio, which is renowned for its low on-state resistance and high switching performance. The PHP63NQ03LT is particularly suitable for a wide range of applications, including DC-DC converters, motor drives, and power management tasks in various electronic devices.

Key Features:

  • Low On-State Resistance: The PHP63NQ03LT boasts an ultra-low on-state resistance (R<sub>DS(on)) of just 30 mΩ at V<sub>GS = 10 V, which significantly reduces power losses and improves efficiency in high-current applications.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 63 A, this MOSFET can handle substantial power levels, making it ideal for high-performance power systems.
  • Enhanced Switching Performance: The TrenchMOS technology ensures fast switching speeds, reducing switching losses and improving the overall performance of power conversion systems.
  • Robust Thermal Characteristics: The PHP63NQ03LT is encapsulated in a TO-220 package, which offers excellent thermal conduction properties, allowing for better heat dissipation and enhanced reliability under high-temperature operating conditions.
  • High Avalanche Energy Rating: The device is rated for high avalanche energy (E<sub>ar), providing a high level of ruggedness and ensuring safe operation even under extreme conditions.

Applications:

The versatility of the PHP63NQ03LT MOSFET makes it an excellent choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power inverters and converters
  • High-efficiency DC-DC conversion
  • Motor control circuits
  • Automotive and telecommunication infrastructure

With its combination of high efficiency, reliability, and performance, the NXP PHP63NQ03LT is a superb choice for engineers and designers looking to optimize their power management systems. Whether in industrial, automotive, or consumer electronics, this MOSFET delivers the performance needed to meet the demands of modern power-intensive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2820 $62.8200
23+ $5.1548 $118.5604
35+ $4.9942 $174.7970
48+ $4.8325 $231.9600
62+ $4.6720 $289.6640
83+ $4.1880 $347.6040
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 2,150 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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