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PHX27NQ11T,127

Part No PHX27NQ11T,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 110V 20.8A SOT186A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 110V
Continuous Drain Current at 25°C 20.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1087853-PHX27NQ11T,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHX27NQ11T,127 CAD Model

Description

Manufacturer: NXP Semiconductors

The PHX27NQ11T,127 is a state-of-the-art power MOSFET produced by NXP Semiconductors, a leader in the semiconductor industry. This product is designed to cater to a wide range of applications, including switching regulators, switching converters, motor drivers, relay drivers, and more. The MOSFET is a key component in modern electronics, offering high efficiency, fast switching, and reliability.

Key Features

  • Low On-Resistance: The PHX27NQ11T,127 features low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can handle high-frequency operations with ease.
  • High Thermal Performance: With an excellent thermal design, the product can sustain high temperatures, ensuring reliability and longevity.
  • Logic Level Gate Drive: This device can be driven directly from microcontrollers or other logic devices, simplifying the control circuitry.

Electrical Characteristics

  • Drain-Source Voltage (Vds): The maximum drain-source voltage rating ensures the device can handle the required power levels.
  • Continuous Drain Current (Id): This parameter indicates the maximum current the MOSFET can conduct continuously.
  • Power Dissipation (Pd): Reflects the amount of power the device can dissipate, crucial for thermal management.
  • Gate-Source Voltage (Vgs): Specifies the voltage range that can be applied to the gate without damaging the device.

Applications

The PHX27NQ11T,127 is versatile and can be used in various applications, such as:

  • DC/DC Converters
  • Power Management Systems
  • Motor Control Circuits
  • Automotive Electronics
  • LED Lighting

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable products. The PHX27NQ11T,127 is subjected to rigorous testing and quality control measures to ensure it meets the stringent requirements of the electronics industry. Customers can trust in the durability and performance of this MOSFET for their critical applications.

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