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PMDPB28UN,115

Part No PMDPB28UN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.6A HUSON6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 37 mOhm @ 4.6A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.7nC @ 4.5V
Max Input Capacitance 265pF @ 10V
Maximum Power Dissipation 510mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089505-PMDPB28UN,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMDPB28UN,115 CAD Model

Description

The PMDPB28UN,115 is a high-performance, dual N-channel Trench MOSFET housed in a leadless ultra-small DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) package, designed and manufactured by NXP Semiconductors. This compact yet powerful component is engineered for a broad range of applications, including mobile devices, power management, and high-speed switching circuits.

Key Features

  • Low On-Resistance: The PMDPB28UN,115 boasts an exceptionally low on-resistance, which enhances its efficiency and reduces power losses during operation, leading to improved overall performance and energy savings.
  • High-Speed Switching: Designed for high-speed switching applications, this MOSFET provides fast switching performance, which is crucial for high-frequency power converters and other applications requiring rapid on-off cycles.
  • Small Footprint: The ultra-compact DFN2020-6 (SOT1118) package allows for a minimal PCB space requirement, making it an ideal choice for space-constrained applications.
  • Dual N-Channel Configuration: The dual N-channel configuration enables the use of two MOSFETs in a single package, providing design flexibility and reducing component count in circuit designs.

Applications

The versatility of the PMDPB28UN,115 allows it to be used in a wide variety of applications. It is particularly well-suited for:

  • Load switching in portable devices
  • Battery management systems
  • Power supply converters
  • DC-DC converters
  • Motor control circuits

Technical Specifications

The PMDPB28UN,115 operates with a drain-source voltage (V<sub>DS) of 30V and a continuous drain current (I<sub>D) of 8.7A. The device's low threshold voltage ensures low-voltage drive capability, which is essential for battery-operated devices. With its high energy efficiency and reliability, the PMDPB28UN,115 is a prime choice for designers looking for a MOSFET that delivers both performance and miniaturization.

For detailed technical specifications, datasheets, and support documentation, customers should consult the NXP Semiconductors official website or contact their local NXP sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3574 $58.9350
60+ $1.9346 $116.0760
93+ $1.8746 $174.3378
128+ $1.8134 $232.1152
165+ $1.7533 $289.2945
221+ $1.5720 $347.4120
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 24,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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