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PMGD175XN,115

Part No PMGD175XN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.9A 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 900mA
Maximum Rds On at Id,Vgs 225 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.1nC @ 4.5V
Max Input Capacitance 75pF @ 15V
Maximum Power Dissipation 390mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089675-PMGD175XN,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMGD175XN,115 CAD Model

Description

The PMGD175XN,115 is a high-performance, N-channel Trench MOSFET manufactured by NXP Semiconductors, a leader in the electronic components industry. This MOSFET is designed to deliver efficiency and reliability for a wide range of applications, including but not limited to, power management, switching circuits, and high-speed communication systems.

Key Features

  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power losses during operation.
  • High-Speed Switching: With fast switching capabilities, the PMGD175XN,115 is ideal for applications that require rapid on-off cycles, contributing to better performance in power conversion and regulation tasks.
  • Low Threshold Voltage: The low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with low-voltage logic levels and reducing the overall power consumption.
  • Small Footprint: Housed in a compact SOT-869 package, the PMGD175XN,115 saves valuable board space and is suitable for space-constrained applications.
  • Robust Thermal Performance: The MOSFET is designed to handle significant thermal stress, ensuring reliability and longevity even in environments with high temperature fluctuations.

Applications

The PMGD175XN,115 is versatile and can be used in various applications, including:

  • DC/DC converters
  • Power management for portable devices
  • Load switches
  • Battery management systems
  • Motor control circuits

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PMGD175XN,115 undergoes rigorous testing and quality control procedures to ensure it meets the stringent requirements of the industry. Customers can trust this MOSFET to perform consistently in their critical applications.

Environmental Compliance

The PMGD175XN,115 is RoHS compliant, reflecting NXP's dedication to environmental responsibility. By adhering to these standards, NXP ensures that the MOSFET is free from hazardous substances, making it a safe choice for both the consumer and the environment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1727 $57.8545
815+ $0.1418 $115.5670
1,265+ $0.1374 $173.8110
1,740+ $0.1328 $231.0720
2,250+ $0.1284 $288.9000
3,010+ $0.1152 $346.7520
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,650 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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