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PMXB360ENEA

Part No PMXB360ENEA
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 1.1A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 4.5nC @ 10V
Max Input Capacitance 130pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1010D-3
Dimension 3-XDFN Exposed Pad
Win Source Part Number 004432-PMXB360ENEA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMXB360ENEA CAD Model

Description

The NXP PMXB360ENEA is a cutting-edge, high-performance product designed to meet the demanding needs of modern electronics. This versatile component is part of NXP's extensive portfolio of semiconductor solutions, known for their reliability and innovation. Crafted with precision, the PMXB360ENEA is ideal for applications requiring efficient power management and robust performance.

Key Features

  • High Efficiency: The PMXB360ENEA is engineered for optimal power conversion efficiency, which is essential for extending battery life in portable devices and reducing heat dissipation in high-power systems.
  • Durable Construction: Built with NXP's rigorous quality standards, this product offers exceptional durability and a long operational lifespan, ensuring consistent performance even under challenging conditions.
  • Compact Design: Its small form factor makes it an excellent choice for space-constrained applications, providing powerful functionality without compromising on space.
  • Wide Operating Range: The device can operate effectively across a broad range of temperatures and voltages, making it suitable for a variety of industrial and consumer applications.

Applications

The PMXB360ENEA is versatile enough to be used in a multitude of applications, including but not limited to:

  • Power supply modules
  • DC-DC converters
  • Automotive systems
  • Renewable energy installations
  • Telecommunication equipment

Technical Specifications

As a product designed by NXP, a leader in the semiconductor industry, the PMXB360ENEA comes with a set of technical specifications that ensure its suitability for high-demand applications:

  • Package: Extremely thin and leadless
  • High maximum continuous drain current
  • Low on-state resistance
  • Fast switching capabilities
  • Enhanced thermal performance

For detailed technical data, reference designs, and support resources, customers should consult the official NXP datasheets and product documentation available on the NXP website.

Conclusion

The NXP PMXB360ENEA represents a blend of performance, efficiency, and reliability, making it a top choice for engineers and designers looking to create sophisticated electronic systems. With its robust feature set and adaptability, it stands as a testament to NXP's commitment to providing advanced semiconductor solutions that push the boundaries of technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.6617 $58.6468
9+ $12.0301 $108.2709
13+ $11.6542 $151.5046
18+ $11.2782 $203.0076
23+ $10.9023 $250.7529
31+ $9.7745 $303.0095
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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