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PSMN010-25YLC,115

Part No PSMN010-25YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 39A LFPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 678pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 121736-PSMN010-25YLC,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN010-25YLC,115 CAD Model

Description

The PSMN010-25YLC,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a leader in the field of high-efficiency power management components. This particular MOSFET is designed to deliver exceptional performance for a wide range of applications, including but not limited to, power supply, automotive, computing, and industrial systems.

Key Features:

  • Low On-Resistance: The MOSFET features an ultra-low on-resistance of 25 mOhms, which ensures high efficiency and reduces power losses during operation.
  • High Continuous Drain Current: It supports a high continuous drain current of up to 100 A, making it suitable for applications that require a high current capability.
  • High-Speed Switching: With its fast switching capabilities, the PSMN010-25YLC,115 is ideal for high-frequency applications, providing improved performance and efficiency.
  • Enhanced Thermal Performance: The product is encapsulated in a compact, LFPAK33 package, which is designed to offer excellent thermal performance and a low thermal resistance.
  • Logic Level Gate Drive: This feature allows the MOSFET to be driven directly from microcontrollers or other logic devices, simplifying the design and reducing component count.

Electrical Characteristics:

  • Drain-source voltage (V<sub>DS): 25 V
  • Gate-source voltage (V<sub>GS): ±20 V
  • Maximum drain current (I<sub>D): 100 A at 25°C
  • Power dissipation (P<sub>D): 103 W

The PSMN010-25YLC,115 is not only robust and reliable but also optimized for low voltage applications where efficiency is critical. Its advanced technology ensures minimal conduction losses and lower switching noise, which is essential for modern electronic devices that demand high power density and energy-saving features.

Whether you are designing power management systems for consumer electronics, automotive applications, or industrial equipment, the PSMN010-25YLC,115 from NXP Semiconductors offers the performance and reliability required to meet the challenges of today's high-efficiency power conversion and management solutions.

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