The PSMN017-60YS is a high-performance N-Channel MOSFET from NXP Semiconductors, designed to deliver efficiency and power for a wide range of applications. This MOSFET is part of NXP's NextPowerS3 portfolio, which is renowned for its state-of-the-art technology that provides reduced conduction and switching losses.

Key Features

• Low On-State Resistance: The device features an ultra-low on-state resistance (R<sub>DS(on)) of only 17 mΩ at V<sub>GS = 10 V, which translates into minimal power loss and improved overall efficiency in operation.
• High Continuous Drain Current: With a robust continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current applications with ease, making it suitable for power-intensive tasks.
• High Avalanche Energy: The PSMN017-60YS is capable of withstanding high energy pulses in the avalanche and commutation modes, offering reliable performance under stress conditions.
• 60V Drain-Source Voltage: The MOSFET operates at a drain-source voltage (V<sub>DS) of 60V, providing a good balance between performance and voltage rating for various applications.

Applications

The PSMN017-60YS MOSFET is versatile and can be used in a multitude of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Battery protection circuits
• Switch mode power supplies (SMPS)
• Automotive applications

Advanced Packaging

This MOSFET is available in a LFPAK56 (Power-SO8) package, which is optimized for high thermal performance and reduced footprint on PCBs. The package is designed for soldering with excellent reliability, making it suitable for automated assembly lines and harsh operating environments.

Quality and Reliability

NXP Semiconductors is committed to providing products that meet the highest standards of quality and reliability. The PSMN017-60YS MOSFET is no exception, undergoing rigorous testing to ensure it performs to specifications across a range of temperatures and conditions.