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FQI3P50TU

Part No FQI3P50TU
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 500V 2.7A I2PAK / P-Channel 500 V 2.7A (Tc) 3.13W (Ta), 85W (Tc) Through Hole I2PAK (TO-262)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
Power Dissipation (Max) 3.13W, 85W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package I2PAK (TO-262)
Case / Package TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number FQI3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1323959-FQI3P50TU
Ultra Librarian 3D Model Ultra Librarian FQI3P50TU CAD Model

Description

The ON Semiconductor FQI3P50TU is a high-performance P-Channel QFET® MOSFET that provides efficient power management solutions for a wide range of applications. This MOSFET is designed to deliver low on-resistance and high switching performance, making it well-suited for high-efficiency power conversion in both synchronous and non-synchronous configurations.

Key Features:

  • High Voltage Capability: The FQI3P50TU operates at -500V, providing robust performance for high voltage applications.
  • Low On-Resistance: With a low R<sub>DS(on) value, this MOSFET ensures minimal power loss and heat generation during operation, enhancing overall system efficiency.
  • Fast Switching Speed: Designed with fast switching in mind, this component reduces switching losses and improves performance in high-frequency applications.
  • High Current Rating: This MOSFET supports a continuous drain current of -3.1A, accommodating a range of power-intensive tasks.
  • TO-251AA Package: The FQI3P50TU comes in a TO-251AA package, known for its compact size and ability to handle high power dissipation.

Applications:

The versatility of the FQI3P50TU allows it to be integrated into various applications including:

  • Power supply circuits
  • DC/DC converters
  • Motor drives
  • Lighting systems
  • Inverters
  • Switch mode power supplies (SMPS)

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The FQI3P50TU MOSFET is no exception, as it is designed to meet rigorous industry standards for reliability and performance. With its robust construction and proven technology, this MOSFET is an excellent choice for designers looking to create durable and efficient electronic systems.

Conclusion:

The FQI3P50TU from ON Semiconductor represents a blend of performance, efficiency, and reliability, making it an ideal choice for engineers and designers seeking to optimize their power management systems. Its superior electrical characteristics ensure that it stands out as a powerful component in a variety of electronic applications.

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