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PSMN1R0-30YLC,115

Part No PSMN1R0-30YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 103.5nC @ 10V
Max Input Capacitance 6645pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 272W (Tc)
Maximum Rds On at Id,Vgs 1.15 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 136386-PSMN1R0-30YLC,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN1R0-30YLC,115 CAD Model

Description

Introducing the PSMN1R0-30YLC,115 MOSFET from NXP Semiconductors

The PSMN1R0-30YLC,115 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is a part of NXP's extensive portfolio of energy-efficient devices, engineered to meet the increasing demands of modern electronic applications. It is an ideal choice for a wide range of applications, including power management, switching regulators, and motor control.

Key Features

  • Low On-Resistance: The device features a very low on-state resistance (R<sub>DS(on)) of just 1.0 mΩ at V<sub>GS = 10 V, which enhances its efficiency by minimizing conduction losses.
  • High Continuous Drain Current: It can support a high continuous drain current (I<sub>D) of up to 100 A, making it suitable for high-power applications.
  • High-Speed Switching: With fast switching performance, the PSMN1R0-30YLC,115 is capable of handling high-frequency operations, which is beneficial for efficient power conversion.
  • Low Gate Charge: The low gate charge (Q<sub>G) of the device allows for reduced switching losses and improves overall system efficiency.
  • Logic Level Gate Drive: The MOSFET can be driven by logic-level voltages, simplifying the drive circuitry in various applications.

Robust and Reliable

The PSMN1R0-30YLC,115 is built to be robust and reliable. It is encapsulated in a compact LFPAK33 package, which not only saves space but also provides excellent thermal performance. The device is also characterized by its high ruggedness and is designed to withstand harsh operating conditions, ensuring long-term reliability.

Applications

Thanks to its versatile characteristics, the PSMN1R0-30YLC,115 is suitable for a variety of applications, including:

  • DC/DC converters
  • Power supplies for servers, telecom, and computing
  • Motor drives
  • Automotive applications
  • Power management in portable and battery-powered devices

Whether you're designing power systems for industrial, automotive, or consumer electronics, the PSMN1R0-30YLC,115 from NXP Semiconductors offers the performance and reliability needed to enhance your designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1805 $53.1225
105+ $0.9686 $101.7030
160+ $0.9384 $150.1440
225+ $0.9081 $204.3225
285+ $0.8778 $250.1730
385+ $0.7870 $302.9950
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 165,100 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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