The PSMN2R6-30YLC,115 is a high-performance, N-channel MOSFET brought to you by NXP Semiconductors, a leader in the field of high-quality electronic components. This MOSFET is designed to deliver efficient power management and conversion in a compact package, making it an ideal choice for a wide range of applications, including computing, automotive, and industrial systems.

Key Features

• Low On-State Resistance: With an RDS(on) of just 2.6mΩ at VGS = 10 V, this MOSFET provides exceptional efficiency, reducing power losses and improving overall system performance.
• High Continuous Drain Current: It can handle a continuous drain current (ID) of up to 100 A, making it suitable for high-power applications.
• 30 V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (VDS) of 30 V, offering a good balance between performance and reliability.
• Power-SO8 Package: The PSMN2R6-30YLC,115 comes in a compact Power-SO8 package, which is not only space-saving but also ensures good thermal performance.
• Low Gate Charge: A low gate charge (Qg) facilitates faster switching, which is essential for reducing switching losses in high-frequency power conversion.

Applications

The versatility of the PSMN2R6-30YLC,115 allows it to be used in various applications that require high efficiency and power density. It is particularly well-suited for:

• DC/DC converters in computing and server power supplies.
• Motor drives in automotive and industrial environments.
• Power management circuits in battery-operated devices.
• Synchronous rectification in power supply units.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PSMN2R6-30YLC,115 MOSFET is a testament to this commitment, offering robust performance in a wide range of environmental conditions. With its advanced silicon technology and rigorous testing protocols, this MOSFET is designed to provide long-term, reliable operation in your critical power applications.