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PSMN5R0-100PS

Part No PSMN5R0-100PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 9900pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 338W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210294-PSMN5R0-100PS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN5R0-100PS CAD Model

Description

The PSMN5R0-100PS is a robust and high-performance Power MOSFET produced by NXP Semiconductors. This semiconductor device is designed to handle high currents and voltages with efficiency, making it an ideal component for a wide range of power applications. Its superior design ensures that it operates with low on-state resistance and minimal power loss, which is critical for maintaining energy efficiency in electronic circuits.

Key Features

  • Low On-State Resistance (R<sub>DS(on)): The PSMN5R0-100PS boasts an exceptionally low on-state resistance, which translates into reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current (I<sub>D): With a high continuous drain current capability, this MOSFET can handle significant power levels, making it suitable for high-power density applications.
  • 100V Drain-Source Voltage (V<sub>DS): The device can sustain a drain-source voltage of up to 100 volts, offering a wide safety margin for various electronic designs.
  • Fast Switching Speed: The fast switching characteristics of the PSMN5R0-100PS ensure minimal switching losses, which is critical for high-frequency power converters and inverters.
  • Enhanced Thermal Performance: Its excellent thermal management capabilities ensure reliability and longevity, even under strenuous operating conditions.
  • TO-220 Package: The MOSFET comes in a widely used TO-220 package, which is known for its ease of mounting and good thermal and electrical performance.

Applications

The PSMN5R0-100PS is suitable for a variety of applications, including:

  • DC-DC Converters
  • Motor Drives
  • Power Management Systems
  • Switch Mode Power Supplies (SMPS)
  • Automotive Applications
  • High-performance Computing
  • Renewable Energy Systems

Engineers and designers choose the PSMN5R0-100PS for its reliability, efficiency, and the ability to improve the power density of their systems. NXP's commitment to quality ensures that this MOSFET meets the rigorous demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5664 $59.0272
55+ $2.1067 $115.8685
85+ $2.0409 $173.4765
117+ $1.9751 $231.0867
152+ $1.9092 $290.1984
203+ $1.7117 $347.4751
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Availability: 6,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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