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2N3771G

Part No 2N3771G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description High Power NPN Silicon Power Transistors | TRANS NPN 40V 30A TO-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Transistor Type NPN
Current - Collector (Ic) (Maximum) 30A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 4V at 6A, 30A
Current - Collector Cutoff (Maximum) 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 15 at 15A, 4V
Maximum Power 150W
Frequency - Transition 200kHz
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3)
Family Part Number 2N3771
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1123783-2N3771G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian 2N3771G CAD Model

Description

ON Semiconductor 2N3771G Power Transistor

The 2N3771G is a high-power NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This robust transistor is primarily intended for linear and switching applications. It is housed in a TO-204AA (TO-3) package, which ensures optimal heat dissipation and reliability in high-power circuits.

Key Features and Benefits

  • Voltage and Current Ratings: The 2N3771G boasts impressive ratings with a collector-emitter voltage (VCEO) of 40V and a collector current (IC) of up to 30A, making it suitable for a wide range of power applications.
  • High Power Dissipation: With a power dissipation of 150W, this transistor can handle significant energy without compromising performance, which is vital for demanding power applications.
  • Low Saturation Voltage: The device features a low collector-emitter saturation voltage, which reduces power loss and improves efficiency in saturated switch operations.
  • High Gain Bandwidth Product: It offers a transition frequency (fT) of 800kHz, indicating good frequency response for a power transistor, which is beneficial for amplification in audio and other signal processing applications.
  • Rugged Construction: The TO-3 metal case ensures ruggedness and superior thermal performance, making the 2N3771G a reliable choice for demanding environments.

Applications

The 2N3771G is versatile and can be used in various applications, including:

  • Power linear and switching circuits
  • Audio amplifiers
  • Regulators
  • Motor controls
  • High-fidelity amplifiers

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2N3771G is no exception, with its manufacturing process designed to ensure reliability and performance consistency. Customers can trust this component for their high-power circuit requirements, knowing it meets the stringent standards set by ON Semiconductor.

Environmental Compliance

The 2N3771G is also designed with environmental responsibility in mind. It complies with RoHS (Restriction of Hazardous Substances) directives, which means it is free from harmful substances like lead, mercury, and cadmium, ensuring safer electronics and a reduced environmental impact.

Overall, the 2N3771G from ON Semiconductor is a reliable and efficient solution for designers and engineers looking to incorporate a high-power transistor into their applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.0344 $60.5160
35+ $3.3102 $115.8570
55+ $3.2074 $176.4070
75+ $3.1035 $232.7625
97+ $2.9995 $290.9515
129+ $2.6900 $347.0100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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