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2N4208

Part No 2N4208
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 0.05A TO18
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 12 V
Vce Saturation (Max) @ Ib, Ic 130mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 300mV
Power - Max 300 mW
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Base Product Number 2N420
Standard Package 250 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 541158-2N4208
Ultra Librarian 3D Model Ultra Librarian 2N4208 CAD Model

Description

The 2N4208 is a versatile and high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor. This transistor is designed to cater to a wide array of electronic applications, particularly excelling in high-speed switching operations. It is an essential component for designers and engineers looking for reliable and efficient solutions in their electronic circuits.

Key Features

  • High Current Gain: The 2N4208 offers a high current gain (hFE), which ensures that a small input current can be amplified to control a larger output current, making it ideal for amplification purposes.
  • Low Saturation Voltage: This transistor has a low V<sub>CE(sat), which minimizes power loss and improves efficiency in saturation mode operations.
  • Fast Switching Times: With rapid transition times, the 2N4208 can switch on and off quickly, making it suitable for high-frequency applications.
  • High Reliability: Manufactured by ON Semiconductor, a leader in the semiconductor industry, the 2N4208 is built to last and perform consistently under various conditions.
  • Versatile Application Range: This component can be used in a multitude of applications such as amplifiers, switching devices, and signal processing.

Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 30V Collector-Base Voltage (V<sub>CBO) 60V Emitter-Base Voltage (V<sub>EBO) 5V Collector Current (I<sub>C) 600mA Power Dissipation (P<sub>D) 625mW

Applications

The 2N4208 is suitable for a wide variety of applications, including but not limited to:

  • General-purpose switching and amplification
  • Audio amplifiers and signal processing
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems and DC-DC converters
  • Telecommunication circuits

ON Semiconductor's commitment to high-quality components is reflected in the 2N4208, ensuring that it meets the stringent requirements of modern electronic devices. Whether you are designing a simple circuit or an intricate system, the 2N4208 is a reliable and efficient choice for your NPN transistor needs.

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