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2SC2812N6-CPA-TB-E

Part No 2SC2812N6-CPA-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.15A CP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 1mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-CP
Win Source Part Number 1004357-2SC2812N6-CPA-TB-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2812N6-CPA-TB-E CAD Model

Description

Product Overview: 2SC2812N6-CPA-TB-E by ON Semiconductor

The 2SC2812N6-CPA-TB-E is a high-performance bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This NPN transistor is designed to meet the requirements of various electronic applications, offering a blend of reliability, efficiency, and versatility.

Key Features

  • Transistor Type: NPN - This transistor type indicates a negative-positive-negative layer structure, which is commonly used in amplification and switching applications.
  • High Current Gain: The device offers a high current gain (hFE), which makes it suitable for applications that require signal amplification.
  • Low Saturation Voltage: The low VCE(sat) ensures efficient operation with minimal voltage drop across the transistor when it is in the on state, leading to lower power dissipation.
  • High-Speed Switching: Fast switching capabilities make it ideal for high-frequency applications, such as power supplies and converters.
  • Package: The transistor comes in a TO-92 package, which is widely used for through-hole mounting and is known for its ease of integration into various circuit designs.
  • RoHS Compliant: The 2SC2812N6-CPA-TB-E is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for electronic manufacturers.

Applications

The versatility of the 2SC2812N6-CPA-TB-E allows it to be used in a wide range of applications. It is particularly well-suited for:

  • General-purpose amplification circuits
  • Switching regulators and converters
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products that exceed industry standards for performance and reliability. The 2SC2812N6-CPA-TB-E transistor is built to provide long-term stability and is rigorously tested to ensure it meets the stringent requirements of the electronics industry.

In summary, the 2SC2812N6-CPA-TB-E from ON Semiconductor is a reliable and efficient solution for designers looking to enhance their electronic designs with a robust NPN transistor. Its high current gain, low saturation voltage, and high-speed switching characteristics make it a versatile choice for a multitude of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,025+ $0.0286 $57.9150
4,930+ $0.0235 $115.8550
7,615+ $0.0228 $173.6220
10,530+ $0.0219 $230.6070
13,590+ $0.0213 $289.4670
18,185+ $0.0191 $347.3335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 312,000 pieces
MOQ: 2025 pcs
Order Increment : 1 pcs
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