The 2SC3396 is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. With its exceptional amplification capabilities and efficient switching performance, the 2SC3396 is an ideal choice for a wide range of electronic applications.

Key Features

• High Current Gain Bandwidth Product: The 2SC3396 boasts a high fT, making it suitable for applications requiring fast switching and high-frequency operations.
• Low Saturation Voltage: The low V<sub>CE(sat) ensures efficient operation with minimal power loss, which is crucial for power-sensitive designs.
• Complementary Design: This transistor is designed to pair with a complementary PNP transistor, providing a balanced solution for push-pull configurations and amplifier stages.
• Compact Package: Enclosed in a TO-92 package, the 2SC3396 is not only robust but also space-efficient, making it suitable for compact electronic assemblies.

Applications

The versatility of the 2SC3396 allows it to be used in a variety of applications, ranging from audio amplifiers and signal processing to power management and control systems. Its reliable performance makes it a preferred choice for:

• Audio frequency amplifier stages
• Driver stages in hi-fi amplifiers and television circuits
• Switching and linear amplification
• Voltage regulation circuits
• General-purpose switching and amplification

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 120 V Collector-Base Voltage (V<sub>CBO) 120 V Emitter-Base Voltage (V<sub>EBO) 5 V Collector Current (I<sub>C) 50 mA Power Dissipation (P<sub>D) 400 mW Operating Junction Temperature (T<sub>j) -55°C to +150°C

For detailed information, datasheets, and technical support, customers can visit the ON Semiconductor website or contact their local sales representative.