The 2SC5347A-E is a silicon NPN epitaxial planar transistor manufactured by ON Semiconductor. This RF transistor is designed for low noise amplifier applications in the UHF band.

Applications

• Low noise amplifiers (LNAs)
• UHF tuners
• RF front-end circuits
• High-frequency oscillators
• Mixer circuits

Features

• Low noise figure: Ensures minimal signal degradation in amplifier circuits.
• High gain: Provides substantial signal amplification.
• High transition frequency (fT): Enables operation in the UHF band.
• Epitaxial planar structure: Offers improved performance and reliability.
• Small package size: Facilitates compact circuit designs.

Benefits

• Improved signal reception: The low noise figure allows for the amplification of weak signals without introducing significant noise.
• Enhanced system performance: The high gain increases the signal strength, leading to better overall system performance.
• Suitable for high-frequency applications: The high transition frequency allows the transistor to operate effectively in the UHF band.
• Reliable operation: The epitaxial planar structure ensures stable and dependable performance.
• Compact design: The small package size enables the creation of smaller and more efficient electronic devices.

Additional Details

The 2SC5347A-E features a collector-base voltage (VCBO) of typically 30V, a collector-emitter voltage (VCEO) of typically 15V, and an emitter-base voltage (VEBO) of typically 3V. The collector current (IC) is rated up to 50mA. The operating and storage junction temperature range is -55°C to +150°C. The transistor is typically available in a small surface-mount package.