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2SC5415AE-TD-E

Part No 2SC5415AE-TD-E
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN BIPO HI FREQ PCP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 6.7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 9dB
Maximum Power Dissipation 800mW
Typical Gain (hFE) (Min) 90 @ 30mA, 5V
Maximum Current Collector 100mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 1004458-2SC5415AE-TD-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5415AE-TD-E CAD Model

Description

ON Semiconductor 2SC5415AE-TD-E Product Overview

The 2SC5415AE-TD-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed to meet the needs of a wide range of electronic applications. This versatile transistor is well-suited for high-speed switching operations and features a collector-emitter voltage (Vceo) of 50V, collector current (Ic) of 100mA, and power dissipation (Pc) of 200mW.

Key Features

  • High-Speed Switching: The 2SC5415AE-TD-E is optimized for quick transitions, making it ideal for high-frequency switching circuits.
  • Low Saturation Voltage: This BJT has a low Vce(sat), which minimizes power loss and improves efficiency in saturation mode operations.
  • High Gain Bandwidth Product: With a high fT, the device offers excellent frequency response, suitable for amplifier applications that require a wide bandwidth.
  • Compact Package: Enclosed in a small and efficient SOT-416FL package, the 2SC5415AE-TD-E saves valuable board space and is easy to integrate into various designs.

Applications

The versatility of the 2SC5415AE-TD-E makes it an excellent choice for a broad range of applications, including:

  • Audio amplifiers
  • Signal processing
  • Power management systems
  • Driver stages in hi-fi systems
  • Switching regulators

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality and reliability. The 2SC5415AE-TD-E is manufactured with the highest standards, ensuring stable performance and longevity in the most demanding conditions. This product is RoHS compliant, adhering to environmental standards and reducing hazardous substances in electronic components.

Technical Specifications

Parameter Value Transistor Polarity NPN Collector-Emitter Voltage Vceo 50V Collector Current Ic 100mA Power Dissipation Pc 200mW DC Current Gain hFE High Gain Bandwidth Product fT High Package Type SOT-416FL

The 2SC5415AE-TD-E is an exceptional choice for designers looking for a reliable and efficient transistor capable of delivering high-speed performance in a compact footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.3090 $58.7100
460+ $0.2536 $116.6560
710+ $0.2457 $174.4470
975+ $0.2377 $231.7575
1,260+ $0.2298 $289.5480
1,685+ $0.2061 $347.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,200 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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