The 2SC5888 is a high-voltage, high-speed power switching transistor designed by ON Semiconductor, a leader in energy-efficient innovations. This NPN triple diffused planar silicon transistor is specifically engineered to deliver exceptional performance in power amplification and switching applications.

Key Features

• High Breakdown Voltage: The 2SC5888 boasts a collector-to-emitter breakdown voltage (V<sub>CEO) of 400V, making it suitable for high-voltage applications.
• High Speed: With a fast switching response, this transistor is ideal for use in high-frequency power switching circuits, contributing to efficient system performance.
• High Reliability: ON Semiconductor's commitment to quality ensures that the 2SC5888 is reliable for long-term operation, even under strenuous conditions.
• Low Saturation Voltage: The low collector saturation voltage (V<sub>CE(sat)) reduces power loss and improves efficiency, which is crucial in power management applications.

Applications

The 2SC5888 is versatile and can be used in a variety of applications, including:

• Switching regulators
• DC-DC converters
• High-frequency inverters
• Power amplifiers

Technical Specifications

Quality and Environmental Compliance

ON Semiconductor ensures that the 2SC5888 meets rigorous environmental and quality standards. The device complies with RoHS directives, reflecting the company's commitment to environmental sustainability while providing high-quality, durable products.