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2SJ651

Part No 2SJ651
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 20A TO220ML
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 20 V
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220ML
Package / Case TO-220-3 Full Pack
Standard Package 230 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 17174-2SJ651
Ultra Librarian 3D Model Ultra Librarian 2SJ651 CAD Model

Description

The 2SJ651 from ON Semiconductor is a high-performance P-Channel MOSFET that offers efficient power management for a wide range of applications. This semiconductor device is designed to meet the demanding requirements of modern electronic circuits, providing a combination of low on-resistance and high switching speeds.

Key Features

  • Low On-Resistance: The 2SJ651 features an exceptionally low on-resistance, which minimizes power loss and improves overall efficiency, making it ideal for power-intensive applications.
  • High-Speed Switching: With its capability for high-speed switching, this MOSFET can operate in high-frequency circuits, providing better performance in power conversion and regulation tasks.
  • Enhanced Durability: Engineered for reliability, the 2SJ651 is built to withstand tough conditions and provides a robust solution for electronic designs.
  • Reduced Gate Charge: The reduced gate charge of the device enables faster switching and reduced switching losses, contributing to the overall efficiency of the system it is used in.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be driven at lower voltages, making it compatible with low-voltage logic levels and reducing power consumption.

Applications

The versatility of the 2SJ651 MOSFET makes it suitable for a variety of applications, including:

  • Power Supply Circuits
  • DC/DC Converters
  • Motor Drives
  • Load Switching
  • Battery Management Systems
  • Energy Storage Systems
  • High-Efficiency Power Management Designs

Technical Specifications

The 2SJ651 features a drain-to-source voltage (V<sub>DS) of -60V, a continuous drain current (I<sub>D) of -20A, and a power dissipation (P<sub>D) of 40W. Its low on-resistance and high-speed switching capabilities make it a preferred choice for designers who require efficient and reliable power switching.

Conclusion

In summary, the ON Semiconductor 2SJ651 P-Channel MOSFET is a powerful component that enhances the performance and efficiency of electronic systems. Its low on-resistance, high-speed switching, and robust design make it a valuable addition to any power management application. The 2SJ651 is an example of ON Semiconductor's commitment to providing innovative and high-quality semiconductor solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5431 $61.7240
95+ $1.2659 $120.2605
145+ $1.2266 $177.8570
195+ $1.1873 $231.5235
255+ $1.1469 $292.4595
340+ $1.0291 $349.8940
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Availability: 3,350 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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