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2SJ652

Part No 2SJ652
Manufacturer ON Semiconductor
Catalog FETs - Single
Description General-Purpose Switching Device Applications | MOSFET P-CH 60V 28A TO-220ML
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 28A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 38mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs 80nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4360pF at 20V
Power Dissipation (Maximum) 2W, 30W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220ML
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 100
MSL Level 1 (Unlimited)
Win Source Part Number 1126897-2SJ652
Manufacturer Homepage www.ssdc-jp.com/eng/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ652 CAD Model

Description

ON Semiconductor 2SJ652 P-Channel MOSFET

The ON Semiconductor 2SJ652 is a high-performance P-Channel MOSFET that offers excellent power efficiency for a wide range of applications. Designed with advanced semiconductor technology, this MOSFET features a low on-resistance and high switching speed, making it an ideal choice for power management tasks in electronic circuits.

Key Features:

  • Low On-Resistance: The 2SJ652 boasts a very low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications where it is used.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is suitable for high-speed switching applications, contributing to better performance and reduced switching losses.
  • High Power Dissipation: It is capable of dissipating a significant amount of power, making it reliable for use in high-power and high-temperature operations without the risk of overheating.
  • Voltage and Current Ratings: This device can handle a substantial drain-source voltage and continuous drain current, ensuring it can be used in robust applications without performance degradation.
  • Gate Charge: The 2SJ652 has been optimized to have a low total gate charge, which helps in reducing the driving power required and enhances the overall efficiency of the system it is implemented in.

Applications:

The versatility of the ON Semiconductor 2SJ652 P-Channel MOSFET allows it to be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power management for consumer electronics

With its robust design and reliable performance, the 2SJ652 from ON Semiconductor is an excellent choice for designers seeking a P-Channel MOSFET that offers both efficiency and durability. Whether for use in consumer electronics or industrial systems, this MOSFET is engineered to meet the demands of modern electronic applications.

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