The ON Semiconductor 2SK2167-TD-E is a high-performance N-Channel MOSFET that offers excellent power efficiency and reliability. Designed for high-speed switching applications, this MOSFET is an ideal choice for power management tasks in a wide range of electronic devices.

Key Features

• Low On-Resistance: The 2SK2167-TD-E features a very low on-resistance, which reduces conduction losses and improves overall efficiency in your circuit designs.
• High-Speed Switching: With its fast switching capabilities, this MOSFET can handle high-frequency operations, making it suitable for modern electronic applications that require quick response times.
• High Reliability: ON Semiconductor's commitment to quality ensures that the 2SK2167-TD-E MOSFET is reliable for long-term use, even under demanding conditions.
• Voltage and Current Ratings: This device supports a drain-source voltage (Vds) of up to 60V and a continuous drain current (Id) of up to 50A, ensuring compatibility with a variety of power circuits.

Applications

The 2SK2167-TD-E is versatile and can be used in various applications, including:

• Power supplies
• DC/DC converters
• Motor drives
• Automotive applications
• Switching regulators
• LED lighting systems

Technical Specifications

Parameter Value Drain-Source Voltage (Vds) 60V Continuous Drain Current (Id) 50A Power Dissipation (Pd) 45W Rds(on) 8.5 mOhm Package TO-252 (DPAK)

In conclusion, the ON Semiconductor 2SK2167-TD-E MOSFET is a robust and efficient solution for high-speed switching and power management applications. Its low on-resistance, high-speed operation, and reliability make it a preferred choice for engineers and designers looking to enhance their electronic designs.