The 2SK2623-E is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications, including switching regulators, converters, and power amplifiers.

Key Features:

• Device Type: N-Channel MOSFET
• Drain-to-Source Voltage (V<sub>DS): 900V, providing a high breakdown voltage suitable for various high-voltage applications.
• Continuous Drain Current (I<sub>D): 4A, allowing for a moderate amount of current to flow through the device during operation.
• Gate-to-Source Voltage (V<sub>GS): ±30V, offering a wide gate drive range for flexible design options.
• Total Power Dissipation (P<sub>D): 100W, ensuring the device can handle significant power levels without overheating.
• R<sub>DS(on): Low on-resistance, which minimizes power losses and enhances efficiency in high-performance applications.
• Configuration: Single, providing straightforward integration into circuit designs.
• Package: TO-3PN, a popular package type known for its robustness and ease of mounting.

Applications:

The 2SK2623-E MOSFET is ideal for a variety of applications where high voltage and power efficiency are required. It is commonly used in:

• Power supplies and DC/DC converters
• Motor control circuits
• Power inverters
• High-voltage switching circuits
• Power management solutions for consumer electronics

Quality and Reliability:

ON Semiconductor ensures that the 2SK2623-E MOSFET meets stringent quality and reliability standards. The device is designed to provide long-term stability and performance, even in demanding conditions. With ON Semiconductor's reputation for producing durable and reliable components, designers can confidently incorporate the 2SK2623-E into their systems.