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BC847BDW1T1

Part No BC847BDW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN DUAL 45V 100MA SOT-363
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number BC847
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 569378-BC847BDW1T1
Ultra Librarian 3D Model Ultra Librarian BC847BDW1T1 CAD Model

Description

The ON Semiconductor BC847BDW1T1 is a high-quality NPN bipolar (BJT) transistor that offers a seamless integration for a wide range of electronic applications. Known for its reliability and efficiency, this transistor is a popular choice among professionals in the industry. The BC847BDW1T1 is designed to meet the stringent requirements of modern electronic circuits, providing excellent performance in a compact SOT-363 package.

Key Features:

  • Transistor Type: NPN - This allows for efficient current amplification in electronic circuits.
  • Package / Case: SOT-363 - A small surface-mount package that is well-suited for space-constrained applications.
  • DC Current Gain (hFE): A high hFE ensures good current amplification, making the BC847BDW1T1 suitable for a variety of applications, from signal processing to power management.
  • Transition Frequency (fT): The device boasts a high transition frequency, which makes it ideal for high-speed switching applications.
  • Collector-Emitter Voltage (VCEO): The transistor can handle a maximum collector-emitter voltage, providing robust performance for a range of circuit designs.
  • Collector Current - Continuous (IC): It supports a continuous collector current, ensuring stable operation under various conditions.
  • Power Dissipation (Pd): The BC847BDW1T1 is capable of dissipating a certain amount of power without overheating, contributing to the longevity of the device.

Applications:

The versatility of the BC847BDW1T1 makes it suitable for a multitude of applications, including but not limited to:

  • General-purpose switching and amplification
  • Audio amplifiers and sound devices
  • Signal processing
  • Power management circuits
  • Driver stages in high-fidelity amplifiers and television circuits

In conclusion, the ON Semiconductor BC847BDW1T1 is a robust and versatile NPN bipolar transistor that offers excellent performance in a variety of electronic applications. Its compact SOT-363 package and high transition frequency make it a preferred choice for designers looking for a reliable and efficient solution for their circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,725+ $0.0290 $50.0250
3,680+ $0.0272 $100.0960
5,705+ $0.0263 $150.0415
8,165+ $0.0245 $200.0425
10,640+ $0.0235 $250.0400
13,275+ $0.0226 $300.0150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 137,460 pieces
MOQ: 1725 pcs
Order Increment : 1 pcs
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