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BC857CDW1T1G

Part No BC857CDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 45V 0.1A SOT363 / Trans GP BJT PNP 45V 0.1A 380mW 6-Pin SC-88 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 011161-BC857CDW1T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BC857CDW1
Introduction Date November 15, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC857CDW1T1G CAD Model

Description

ON Semiconductor BC857CDW1T1G PNP Transistors

The BC857CDW1T1G from ON Semiconductor is a high-quality PNP bipolar junction transistor (BJT) that is designed for general-purpose amplifier and switching applications. This electronic component is a part of the BC857 series, which is well-regarded for its reliability and performance in various electronic circuits.

The BC857CDW1T1G offers a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of -100mA, making it suitable for moderate power handling applications. The transistor has a -500mW power dissipation which provides a good balance between power handling and size, allowing it to be used in space-constrained designs without compromising on performance.

One of the key features of this transistor is its low collector-emitter saturation voltage, which enhances its efficiency in saturation mode operations. Additionally, the BC857CDW1T1G boasts a high current gain bandwidth product (fT) of 100MHz, which is beneficial for applications requiring high-speed switching.

ON Semiconductor has packaged the BC857CDW1T1G in a SOT-323 package, also known as a SC-70 package. This small surface-mount package is ideal for automated assembly processes and is widely used in today's compact electronic devices. The SOT-323 package helps to reduce the overall footprint of the circuit board, enabling designers to create more compact and portable electronic products.

The BC857CDW1T1G transistor also features a high collector current capability and a wide operating temperature range from -55°C to +150°C, providing stable performance across various environmental conditions. This robustness makes it an excellent choice for industrial, automotive, and consumer applications where reliability is crucial.

Overall, the BC857CDW1T1G PNP transistor from ON Semiconductor is a versatile component that offers a balanced combination of power handling, efficiency, and size. Its suitability for a wide range of applications, along with ON Semiconductor's reputation for quality and reliability, makes it a preferred choice for designers and engineers in the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,135+ $0.0442 $50.1670
2,755+ $0.0363 $100.0065
4,265+ $0.0352 $150.1280
5,885+ $0.0340 $200.0900
7,600+ $0.0329 $250.0400
10,170+ $0.0295 $300.0150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,400 pieces
MOQ: 1135 pcs
Order Increment : 1 pcs
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