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BS170ZL1G

Part No BS170ZL1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 500MA TO92-3
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Rohs State Need to verify
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Categories Discrete Semiconductor Products
Features N-Channel 60 V 500mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-226-3, TO-92-3 Long Body
Case / Package TO-92 (TO-226)
Family Name BS170
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number BS170ZL1G-ND, BS170ZL1GOSTR, =BS170ZL1GOSCT-ND, BS170ZL1GOSCT
Quantity per package 2000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 913556-BS170ZL1G
Ultra Librarian 3D Model Ultra Librarian BS170ZL1G CAD Model

Description

The BS170ZL1G is a high-performance N-Channel MOSFET from ON Semiconductor, renowned for its efficiency and reliability in a wide range of applications. This compact semiconductor device is designed to meet the stringent requirements of modern electronic circuits, providing designers with a versatile component for their switching and amplification needs.

Key Features

  • High Density Cell Design: The BS170ZL1G boasts a high-density cell design that enables lower RDS(on), which translates to reduced on-state resistance. This feature ensures minimal power loss and heat generation during operation, enhancing the overall efficiency of the device.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily driven by logic-level voltages, making it compatible with a variety of control circuits and enabling its use in low-voltage applications.
  • Enhanced Durability: ON Semiconductor's commitment to quality is evident in the BS170ZL1G's robust construction. It is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring a long operational life and reliability under stress.
  • TO-92 Package: Enclosed in a TO-92 package, the BS170ZL1G is not only easy to handle but also provides excellent thermal performance. This packaging is widely preferred for its proven track record in a multitude of electronic applications.

Applications

The versatility of the BS170ZL1G allows it to be used in various applications, ranging from power management to signal processing. It is particularly suited for:

  • DC/DC converters
  • Power switches
  • Motor control circuits
  • Audio amplifiers
  • Hard disk drives
  • And other high-speed switching applications

Specifications

Parameter Value Drain-Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 500mA Power - Max 830mW Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V

In summary, the BS170ZL1G from ON Semiconductor is an exceptional choice for designers seeking a reliable and efficient N-Channel MOSFET. Its superior design ensures performance and durability, making it a staple in the electronic components industry.

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