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CPH5506-TL-E

Part No CPH5506-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 30V 1.5A 5CPH
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP (Emitter Coupled)
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 225mV @ 15mA, 750mA / 375mV @ 15mA, 750mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 100mA, 2V
Maximum Power Dissipation 1.2W
Frequency - Transition 500MHz, 450MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-CPH
Win Source Part Number 013270-CPH5506-TL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name CPH5506
Introduction Date July 11, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian CPH5506-TL-E CAD Model

Description

ON Semiconductor CPH5506-TL-E N-Channel MOSFET

The ON Semiconductor CPH5506-TL-E is a high-performance N-Channel MOSFET designed for a variety of applications, from power management to switching. This device is part of ON Semiconductor's extensive portfolio of MOSFETs that offers designers a balance of efficiency and reliability for their circuit designs.

The CPH5506-TL-E operates with a drain-source voltage (V<sub>DS) of 30V, and a continuous drain current (I<sub>D) of 6A, making it suitable for moderate power applications. The device features a low on-resistance (R<sub>DS(on)) of just 45 mΩ at V<sub>GS = 10V, which helps to minimize conduction losses and improve overall system efficiency.

This MOSFET is designed with advanced trench technology, which enhances its performance in terms of switching speed and thermal management. The fast switching speed is advantageous for high-frequency applications, while the low thermal resistance ensures reliability even under high operating temperatures.

Housed in a compact CPH package, the CPH5506-TL-E is optimized for space-constrained applications. The surface-mount package allows for efficient PCB layout and is suitable for automated assembly processes, reducing manufacturing time and costs.

The device is also characterized by its low gate charge (Q<sub>G), which enables faster switching with reduced driving power. This feature is particularly beneficial in applications where power efficiency is critical, such as in portable electronics, DC/DC converters, and load switches.

ON Semiconductor has designed the CPH5506-TL-E with robustness in mind. It includes built-in protection features such as a Body Diode, which provides reverse current protection and safe operation during inductive switching. The MOSFET's compliance with RoHS standards ensures that it meets global environmental regulations, making it a responsible choice for eco-friendly designs.

In summary, the ON Semiconductor CPH5506-TL-E N-Channel MOSFET is a versatile and efficient solution for designers seeking to enhance the performance of their power management systems. Its combination of low on-resistance, fast switching, and thermal efficiency make it an excellent choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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