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ECH8601M-TL-H-P

Part No ECH8601M-TL-H-P
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate, 2.5V Drive
Drain Source Voltage 24V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Maximum) @ Id, Vgs 23 mOhm @ 4A, 4.5V
Vgs(th) (Maximum) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 7.5nC @ 4.5V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 8-SMD, Flat Lead
Manufacturer Package 8-ECH
Win Source Part Number 773644-ECH8601M-TL-H-P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ECH8601M-TL-H-P CAD Model

Description

Introducing the ECH8601M-TL-H-P MOSFET from ON Semiconductor

The ECH8601M-TL-H-P is a high-performance, P-Channel Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and control for a variety of applications.

Key Features

  • Low On-Resistance: The ECH8601M-TL-H-P boasts an exceptionally low on-resistance, which means it can conduct electricity with minimal power loss, ensuring higher efficiency in your circuit designs.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, reducing transition losses and improving overall performance.
  • Compact Design: Housed in a small, surface-mount package, the ECH8601M-TL-H-P is perfect for space-constrained applications, offering a high power density solution for your design needs.
  • Robust Thermal Performance: The MOSFET's superior thermal characteristics ensure reliable operation even under high temperature conditions, making it suitable for challenging environments.
  • Gate Charge Optimization: Optimized for a lower total gate charge, this MOSFET facilitates reduced power consumption during switching, contributing to energy savings in your system.

Applications

The versatility of the ECH8601M-TL-H-P allows it to be utilized in a broad range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Management Systems
  • Load Switches
  • Portable Devices
  • Motor Control Systems

Quality and Reliability

ON Semiconductor's commitment to quality is evident in the ECH8601M-TL-H-P MOSFET. It is manufactured to the highest standards, ensuring reliable performance and longevity in your products. The device is RoHS compliant, adhering to environmental regulations and promoting sustainability.

Whether you're designing power supplies, optimizing battery-powered devices, or looking to enhance the efficiency of your electronic systems, the ECH8601M-TL-H-P from ON Semiconductor is an excellent choice that combines performance, efficiency, and reliability.

Embrace the power of ON Semiconductor's technology and give your designs the competitive edge with the ECH8601M-TL-H-P MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4441 $59.9535
320+ $0.3644 $116.6080
495+ $0.3531 $174.7845
680+ $0.3416 $232.2880
875+ $0.3303 $289.0125
1,175+ $0.2961 $347.9175
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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