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FCH190N65F_F085

Part No FCH190N65F_F085
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SuperFET II™ FRFET MOSFET, N-Channel, 600V, 20.6A, 190mΩ
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247-3
Continuous Drain Current (ID) 20.6 A
Drain to Source Voltage (Vdss) 650 V
Element Configuration Single
Input Capacitance 3.181 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 208 W
Min Operating Temperature -55 °C
Mount Through Hole
Rds On Max 190 mΩ
RoHS Compliant
Schedule B 8541290080
Weight 6.39 g
Win Source Part Number 1026613-FCH190N65F_F085
Categories Transistors - FETs, MOSFETs - RF
Manufacturer ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FCH190N65F_F085 CAD Model

Description

Introducing the FCH190N65F_F085 from ON Semiconductor

The FCH190N65F_F085 is a state-of-the-art N-channel SuperFET® III MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is engineered to deliver high performance for a wide range of applications, including computing, telecommunications, and industrial designs. With its advanced features, the FCH190N65F_F085 is a perfect choice for designers looking to improve efficiency and thermal performance in their power systems.

Key Features

  • High Current Capability: The FCH190N65F_F085 is capable of handling a continuous drain current of up to 71A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 0.085Ω, this MOSFET ensures minimal power loss and improved efficiency in your circuit.
  • 650V Breakdown Voltage: The device is designed to withstand high voltage conditions, ensuring reliability and robustness in applications requiring high breakdown voltages.
  • Fast Switching: The SuperFET® III technology provides fast switching speeds, which is crucial for reducing switching losses and improving performance in high-frequency power converters.
  • Enhanced Robustness: The MOSFET features improved robustness against repetitive avalanche and high surge events, ensuring durability and a longer lifespan.

Applications

The versatility of the FCH190N65F_F085 allows it to be used in various high-performance applications, including:

  • Server and Telecom Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Industrial Power Supplies
  • High-Performance DC-DC Converters

Reliability and Performance

ON Semiconductor's FCH190N65F_F085 is designed to meet the stringent requirements of modern power systems. It offers excellent reliability through its robust design and ON Semiconductor's proven manufacturing processes. The device's high efficiency and thermal performance make it an ideal choice for designers who require a high-performance MOSFET that can operate reliably even in demanding conditions.

With the FCH190N65F_F085, ON Semiconductor continues to push the boundaries of power MOSFET technology, offering designers a component that excels in efficiency, robustness, and reliability.

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