The FDMS86202ET120 is a high-performance PowerTrench® MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is crafted to deliver optimal power management and efficiency, making it an excellent choice for a wide range of applications, including power supplies, motor drives, and high-performance computing systems.
Key Features
- Low RDS(on): The device boasts an exceptionally low on-resistance, reducing conduction losses and improving overall efficiency.
- High Current Capability: With its ability to handle high currents, the FDMS86202ET120 is suitable for demanding applications that require robust power delivery.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology minimizes gate charge and reduces switching losses, further enhancing the MOSFET's performance.
- Optimized Packaging: The FDMS86202ET120 comes in a compact 5x6 mm Power 56 package, which is optimized for reduced inductance and improved thermal performance.
- Environmentally Friendly: This MOSFET is RoHS compliant and free from hazardous substances, aligning with global environmental standards.
Applications
- DC-DC Converters
- Power Supply Units (PSU)
- Motor Control Systems
- High-Performance Computing
- Synchronous Rectification
Technical Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
120V |
| Continuous Drain Current (ID) |
13A |
| Power Dissipation (PD) |
48W |
| RDS(on) |
8.4 mΩ @ VGS = 10V |
In conclusion, the ON Semiconductor FDMS86202ET120 PowerTrench® MOSFET is a state-of-the-art component that offers superior performance for power-intensive applications. Its low on-resistance, high current capability, and advanced PowerTrench® technology make it a reliable and efficient solution for engineers looking to optimize their power management systems.