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FDMS86202ET120

Part No FDMS86202ET120
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 13.5/102A PWR56 / N-Channel 120 V 13.5A (Ta), 102A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 7.2mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4585 pF @ 60 V
Power Dissipation (Max) 3.3W (Ta), 187W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number FDMS86202
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FDMS86202ET120TR,FDMS86202ET120CT,FDMS86202ET120DKR
Standard Package 3,000
Win Source Part Number 1018798-FDMS86202ET120
Ultra Librarian 3D Model Ultra Librarian FDMS86202ET120 CAD Model

Description

The FDMS86202ET120 is a high-performance PowerTrench® MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is crafted to deliver optimal power management and efficiency, making it an excellent choice for a wide range of applications, including power supplies, motor drives, and high-performance computing systems.

Key Features

  • Low RDS(on): The device boasts an exceptionally low on-resistance, reducing conduction losses and improving overall efficiency.
  • High Current Capability: With its ability to handle high currents, the FDMS86202ET120 is suitable for demanding applications that require robust power delivery.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology minimizes gate charge and reduces switching losses, further enhancing the MOSFET's performance.
  • Optimized Packaging: The FDMS86202ET120 comes in a compact 5x6 mm Power 56 package, which is optimized for reduced inductance and improved thermal performance.
  • Environmentally Friendly: This MOSFET is RoHS compliant and free from hazardous substances, aligning with global environmental standards.

Applications

  • DC-DC Converters
  • Power Supply Units (PSU)
  • Motor Control Systems
  • High-Performance Computing
  • Synchronous Rectification

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 120V
Continuous Drain Current (ID) 13A
Power Dissipation (PD) 48W
RDS(on) 8.4 mΩ @ VGS = 10V

In conclusion, the ON Semiconductor FDMS86202ET120 PowerTrench® MOSFET is a state-of-the-art component that offers superior performance for power-intensive applications. Its low on-resistance, high current capability, and advanced PowerTrench® technology make it a reliable and efficient solution for engineers looking to optimize their power management systems.

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