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HUFA75829D3ST

Part No HUFA75829D3ST
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A TO252AA  /  N-Channel 150 V 18A (Tc) 110W (Tc) Surface Mount TO-252AA
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series UltraFET™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number HUFA75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 965543-HUFA75829D3ST
Ultra Librarian 3D Model Ultra Librarian HUFA75829D3ST CAD Model

Description

The HUFA75829D3ST is a high-performance, N-Channel MOSFET produced by ON Semiconductor, a leader in the field of energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of power electronics in a wide range of applications, including computing systems, power management, and motor control.

Key Features

  • High Current Capability: The HUFA75829D3ST is capable of handling high currents, making it suitable for heavy-duty operations.
  • Low On-Resistance: With its low on-resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss and improved efficiency.
  • Fast Switching Speed: Its fast switching capabilities enable efficient operation at high frequencies, which is essential for reducing energy waste and improving performance.
  • Robust Thermal Performance: The device is designed with an optimal thermal footprint, providing enhanced reliability under high-temperature conditions.
  • Logic Level Gate Drive: It can be driven directly from a microcontroller or logic circuit, simplifying the design of the driving circuitry.

Applications

The versatility of the HUFA75829D3ST allows it to be used in various applications, such as:

  • Power supplies and DC-DC converters
  • Motor drives and controllers
  • Automotive applications
  • Switch mode power supplies (SMPS)
  • LED lighting solutions

Reliability and Quality

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The HUFA75829D3ST is no exception, with its rigorous testing and quality control ensuring that it performs to the specifications under a variety of conditions.

Environmental Compliance

The HUFA75829D3ST is compliant with RoHS (Restriction of Hazardous Substances) directives, indicating that it is manufactured with a commitment to environmental responsibility and the reduction of hazardous materials.

In conclusion, the HUFA75829D3ST from ON Semiconductor is an excellent choice for designers looking for a robust, efficient, and reliable N-Channel MOSFET to power their next-generation electronic devices.

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