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MCH3106-TL-E

Part No MCH3106-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 3A MCPH3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 165mV @ 30mA, 1.5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 280MHz
Mounting SMD (SMT)
Case / Package 3-MCPH
Win Source Part Number 1074547-MCH3106-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH3106-TL-E CAD Model

Description

The MCH3106-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET that offers efficient power management within a compact package. This semiconductor device is designed to cater to a wide range of applications, including load switch, power management, and various other switching applications where power efficiency is crucial.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which minimizes power loss and improves overall efficiency, making it suitable for high-performance power management systems.
  • Small Surface Mount Package: The MCH3106-TL-E comes in a SuperSOT™-6 package, which is ideal for space-constrained applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides rapid transition performance, which is beneficial for high-frequency circuits.
  • Gate Charge Optimization: The device has an optimized gate charge, which reduces switching losses and enables operation at higher frequencies with lower power consumption.
  • P-Channel Device: As a P-Channel MOSFET, it allows for simpler drive circuitry in high-side switch configurations compared to N-Channel MOSFETs, due to the positive gate drive with respect to the source terminal.

Applications

The versatility of the MCH3106-TL-E MOSFET makes it suitable for a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Load Switching
  • Motor Control Systems

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) -30 V Gate-to-Source Voltage (V<sub>GS) ±20 V Continuous Drain Current (I<sub>D) -6 A Power Dissipation (P<sub>D) 1.25 W

With its robust design and high reliability, the MCH3106-TL-E MOSFET from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and performance of their power management systems.

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