The MJE243G from ON Semiconductor is a robust bipolar power transistor designed for use in high-power audio amplifiers, switching circuits, and other electronic applications requiring high voltage and current. This versatile component is a popular choice among engineers and technicians for its reliability and performance in demanding environments.

Key Features

• High Voltage Capability: The MJE243G can handle collector-emitter voltages up to 100V, making it suitable for circuits operating at higher voltages.
• High Current Rating: With a continuous collector current rating of up to 4A, this transistor can drive significant loads without overheating or failure.
• Low Saturation Voltage: The low V<sub>CE(sat) of the MJE243G minimizes power loss and improves efficiency in saturated switch applications.
• Complementary PNP Type: The MJE253G is the complementary PNP type transistor, providing flexibility for push-pull configurations in amplifier designs.
• TO-225 Case: Housed in a TO-225 case, the MJE243G offers a compact form factor that is easy to integrate into various circuit designs.

Applications

The MJE243G transistor is suitable for a wide range of applications, including:

• Linear and switching industrial equipment
• Power amplifiers and audio systems
• DC-DC converters
• Motor control circuits
• Regulator circuits

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 100V Collector Current (I<sub>C) 4A Power Dissipation (P<sub>D) 20W DC Current Gain (h<sub>FE) 30 - 240 Operating Temperature Range -55°C to +150°C

Overall, the MJE243G transistor from ON Semiconductor is a reliable and efficient choice for designers looking to incorporate a high-performance power transistor into their electronic designs.