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MJH11021G

Part No MJH11021G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) @ Ib, Ic 4V @ 150mA, 15A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 400 @ 10A, 5V
Power - Max 150W
Frequency - Transition 3MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1223778-MJH11021G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Motor Drive & Control
Family Name MJH11021
Introduction Date October 01, 1996
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian MJH11021G CAD Model

Description

ON Semiconductor MJH11021G Power Transistor

The ON Semiconductor MJH11021G is a high-power NPN silicon transistor designed for applications requiring high peak currents and fast switching speeds. This robust transistor is well-suited for a wide range of applications, including audio amplifiers, switching regulators, and power inverters. Its high current and voltage capabilities make it an ideal choice for power management tasks where efficiency and reliability are paramount.

The MJH11021G features a collector-emitter voltage (VCEO) of 250V, which provides ample headroom for most high-voltage applications. It can handle continuous collector currents (IC) up to 15A, making it capable of driving large loads without overheating. Moreover, the transistor is capable of peak currents up to 30A, ensuring that it can handle surges and spikes in the circuit without failure.

One of the standout characteristics of the MJH11021G is its high gain bandwidth product (fT) of 4MHz. This specification indicates the frequency at which the transistor can amplify a signal with a gain of 1, making it suitable for high-speed switching applications. Additionally, its low collector-emitter saturation voltage (VCE(sat)) minimizes power loss and improves efficiency in power conversion applications.

The MJH11021G is housed in a TO-247 package, which is known for its high power dissipation capabilities. This package allows for efficient heat dissipation, ensuring the transistor operates within its thermal limits even under high load conditions. It also features an isolated mounting base, which provides increased flexibility in mounting and insulation from the heatsink.

ON Semiconductor's commitment to quality is reflected in the MJH11021G's robust construction and the rigorous testing it undergoes to ensure reliability and performance. This transistor is not only a testament to ON Semiconductor's expertise in power management solutions but also a reliable component for any designer looking to build high-performance, high-power electronic systems.

Whether you're designing professional audio equipment, industrial control systems, or any other application that demands high-current handling and fast switching, the MJH11021G from ON Semiconductor is a component that promises to deliver both performance and reliability.

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