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MMBT2222LT1G

Part No MMBT2222LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.6A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023735-MMBT2222LT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMBT2222LT1G CAD Model

Description

ON Semiconductor MMBT2222LT1G NPN Bipolar Transistor

The ON Semiconductor MMBT2222LT1G is a versatile and high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small-signal transistor is well-suited for linear amplification and switching applications, providing an excellent combination of speed, efficiency, and reliability for designers and engineers.

Constructed with ON Semiconductor's innovative technologies, the MMBT2222LT1G offers superior electrical characteristics. It features a collector-emitter voltage (VCEO) of 40V, collector-base voltage (VCBO) of 75V, and emitter-base voltage (VEBO) of 6V, making it capable of handling moderate voltage applications with ease. The continuous collector current (IC) is rated at 600mA, which allows it to drive moderate loads in circuits.

The MMBT2222LT1G comes in a compact SOT-23 surface-mount package, which is ideal for space-constrained applications. This package is not only space-efficient but also ensures low thermal resistance, enhancing the thermal stability and overall performance of the device.

Key electrical characteristics include a DC current gain (hFE) range of 100 to 300, ensuring consistent amplification across various devices. The low collector-emitter saturation voltage (VCE(sat)) ensures minimal power loss during operation, making the MMBT2222LT1G an energy-efficient choice for portable and battery-powered devices.

This transistor also features fast switching times, with a turn-on time (ton) of 10ns and a turn-off time (toff) of 30ns, which is crucial for high-speed switching applications. The fast response time makes it an ideal component for digital circuits, where rapid state changes are essential.

The MMBT2222LT1G is RoHS compliant, adhering to environmental standards and regulations, which is increasingly important for manufacturers looking to create eco-friendly products. Its robust construction ensures long-term reliability, even in demanding conditions, making it a preferred choice for industrial, commercial, and consumer electronics applications.

In summary, the ON Semiconductor MMBT2222LT1G is a high-quality NPN transistor that offers excellent performance in amplification and switching tasks. Its small form factor, energy efficiency, and fast switching capabilities make it a valuable component for a myriad of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0440 $50.1600
2,775+ $0.0361 $100.1775
4,290+ $0.0350 $150.1500
5,900+ $0.0339 $200.0100
7,625+ $0.0328 $250.1000
10,205+ $0.0294 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 141,000 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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