ON Semiconductor MMSF3P02HDR2G - P-Channel Power MOSFET

The MMSF3P02HDR2G is a high-performance P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This Power MOSFET is built for applications requiring efficient power management and high reliability, making it an ideal choice for a variety of electronic devices and systems.

Key Features:

• Voltage Rating: The device features a drain-to-source voltage (V_DS) of -20V, suitable for a range of low-voltage applications.
• Current Capacity: It boasts a continuous drain current (I_D) of -3.7A, providing ample current for various power needs.
• Low R_DS(on): The MOSFET offers a low on-state resistance of 110 mΩ at V_GS = -4.5V, ensuring efficient operation with minimal power loss.
• High-Speed Switching: Designed for fast switching applications, the MMSF3P02HDR2G allows for efficient power regulation and control.
• Power Dissipation: With a power dissipation of 1.25W, this device can handle significant power without overheating, contributing to system stability.
• Package: Housed in a compact SOT-223 package, the MOSFET saves valuable board space while still delivering robust performance.

Applications:

The ON Semiconductor MMSF3P02HDR2G is versatile and can be used in a wide array of applications, including:

• Power Management Circuits
• DC/DC Converters
• Battery Powered Devices
• Load Switches
• Motor Control Systems

Quality and Reliability:

ON Semiconductor is known for its commitment to quality and the MMSF3P02HDR2G is no exception. It is produced with high manufacturing standards, ensuring reliability and performance consistency. This MOSFET is RoHS compliant, adhering to environmental regulations and promoting sustainability in electronic components.

Whether you are designing a power supply, managing battery operations, or controlling motors, the MMSF3P02HDR2G from ON Semiconductor provides the efficiency, reliability, and performance required for your advanced electronic designs.