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MTB6N60E1

Part No MTB6N60E1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 125 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 886407-MTB6N60E1
Ultra Librarian 3D Model Ultra Librarian MTB6N60E1 CAD Model

Description

ON Semiconductor MTB6N60E1 N-Channel Power MOSFET

The MTB6N60E1 is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is an essential component in modern electronic applications, offering exceptional power efficiency and reliability. It is particularly well-suited for high-efficiency power management tasks in a wide range of products, from industrial systems to consumer electronics.

With a drain-to-source voltage (V<sub>DS) of 600V, the MTB6N60E1 can handle high voltage operations with ease. This makes it an excellent choice for applications that require robust performance in high voltage environments. The device also features a continuous drain current (I<sub>D) of 6A, providing ample current handling capability for a variety of power-intensive tasks.

The MTB6N60E1 boasts a low on-state resistance (R<sub>DS(on)) of 1.25Ω, which minimizes conduction losses and enhances overall efficiency. This low R<sub>DS(on) is a key attribute that helps in reducing power dissipation and improving thermal management in circuits where the MOSFET is deployed.

In addition to its electrical characteristics, the MTB6N60E1 is designed with a robust package that ensures durability and long-term reliability. The device is housed in a TO-220 package, which is widely recognized for its excellent thermal and mechanical properties. This package allows for efficient heat dissipation and provides a strong, secure mounting structure for the MOSFET, making it well-suited for demanding applications where physical stresses may be a concern.

ON Semiconductor has equipped the MTB6N60E1 with advanced features such as fast switching speed, which is critical for reducing switching losses and improving performance in high-frequency applications. The device also includes an integrated diode for body-drain protection, enhancing its resilience against unexpected voltage spikes and ensuring safe operation under various conditions.

Overall, the MTB6N60E1 from ON Semiconductor is a versatile and reliable component that offers a combination of high voltage capability, efficient power handling, and robust physical design. It is an ideal choice for designers looking to optimize their power management solutions with a MOSFET that delivers both performance and durability.

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