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NDD02N60Z-1G

Part No NDD02N60Z-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 10.1nC @ 10V
Max Input Capacitance 274pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 4.8 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 060140-NDD02N60Z-1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDD02N60Z-1G CAD Model

Description

ON Semiconductor NDD02N60Z-1G - Power MOSFET

The NDD02N60Z-1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is specifically tailored for applications that demand high efficiency, low on-resistance, and superior switching performance.

Key Features:

  • Low On-Resistance: With a minimal on-resistance, this MOSFET ensures reduced conduction losses, making it ideal for high-efficiency power management applications.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is crucial for reducing switching losses in power conversion systems.
  • Robust Thermal Performance: The NDD02N60Z-1G is encapsulated in a Pb-free, Halide-free, and RoHS compliant package which enhances its thermal conductivity and longevity.
  • High Breakdown Voltage: It boasts a high breakdown voltage of 600V, providing a comfortable safety margin for applications operating at high voltages.

Applications:

ON Semiconductor's NDD02N60Z-1G is versatile and can be used in a wide range of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Lighting Systems
  • AC-DC Adapters
  • Switch Mode Power Supplies (SMPS)

Product Specifications:

Parameter Value
Drain-to-Source Voltage (VDS) 600V
Continuous Drain Current (ID) 2.2A
Power Dissipation (PD) 35.5W
RDS(on) 3.4 Ω
Configuration Single
Package TO-220-3

Overall, the NDD02N60Z-1G from ON Semiconductor stands out for its efficiency and reliability, making it a solid choice for designers looking to improve their system performance while maintaining energy conservation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3384 $59.2200
420+ $0.2778 $116.6760
645+ $0.2690 $173.5050
890+ $0.2603 $231.6670
1,150+ $0.2517 $289.4550
1,540+ $0.2257 $347.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 206,600 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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