ON Semiconductor NDD02N60Z-1G - Power MOSFET
The NDD02N60Z-1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is specifically tailored for applications that demand high efficiency, low on-resistance, and superior switching performance.
Key Features:
- Low On-Resistance: With a minimal on-resistance, this MOSFET ensures reduced conduction losses, making it ideal for high-efficiency power management applications.
- High-Speed Switching: The device is optimized for fast switching speeds, which is crucial for reducing switching losses in power conversion systems.
- Robust Thermal Performance: The NDD02N60Z-1G is encapsulated in a Pb-free, Halide-free, and RoHS compliant package which enhances its thermal conductivity and longevity.
- High Breakdown Voltage: It boasts a high breakdown voltage of 600V, providing a comfortable safety margin for applications operating at high voltages.
Applications:
ON Semiconductor's NDD02N60Z-1G is versatile and can be used in a wide range of applications, including:
- Power Supply Units (PSUs)
- DC-DC Converters
- Motor Drives
- Lighting Systems
- AC-DC Adapters
- Switch Mode Power Supplies (SMPS)
Product Specifications:
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
600V |
| Continuous Drain Current (ID) |
2.2A |
| Power Dissipation (PD) |
35.5W |
| RDS(on) |
3.4 Ω |
| Configuration |
Single |
| Package |
TO-220-3 |
Overall, the NDD02N60Z-1G from ON Semiconductor stands out for its efficiency and reliability, making it a solid choice for designers looking to improve their system performance while maintaining energy conservation.