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NDD04N60Z-1G

Part No NDD04N60Z-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 600V 4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 093397-NDD04N60Z-1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NDD04N60Z
Introduction Date June 15, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NDD04N60Z-1G CAD Model

Description

ON Semiconductor NDD04N60Z-1G Power MOSFET

The NDD04N60Z-1G is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This component is part of ON Semiconductor's extensive portfolio of power management devices, specifically tailored for efficient power conversion and control in a wide range of electronic applications.

Constructed with advanced silicon technology, the NDD04N60Z-1G boasts a robust and durable design that ensures reliable performance in demanding conditions. It features a drain-to-source voltage (VDS) of 600V, which makes it suitable for high-voltage applications. The device's continuous drain current (ID) is rated at 4A, and it has a low on-state resistance (RDS(on)) of 1.25Ω, contributing to its efficiency by minimizing power losses during operation.

The NDD04N60Z-1G comes in a TO-252 (DPAK) package, which is known for its compact footprint and excellent thermal performance. It is designed to handle high surge currents without degradation, ensuring a long operating life and stability in circuits that experience frequent current spikes. The device also incorporates an integrated Zener diode to protect against voltage transients, adding an extra layer of security for sensitive electronic systems.

With fast switching capabilities, the NDD04N60Z-1G is an excellent choice for power supply applications, including AC-DC converters, DC-DC converters, and Power Factor Correction (PFC) circuits. Its high efficiency and thermal performance make it ideal for use in a variety of products such as LED lighting, computer servers, telecommunications equipment, and industrial systems.

ON Semiconductor's commitment to environmentally friendly manufacturing processes means that the NDD04N60Z-1G is also RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances. With its combination of high-voltage capability, energy efficiency, and robust design, the NDD04N60Z-1G is a reliable and versatile component suitable for a broad array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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