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NDD60N360U1T4G

Part No NDD60N360U1T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A DPAK  /  N-Channel 600 V 11A (Tc) 114W (Tc) Surface Mount DPAK
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V
Power Dissipation (Max) 114W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NDD60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNDD60N360U1T4G,2156-NDD60N360U1T4G-ONTR
Standard Package 2,500
Win Source Part Number 1081890-NDD60N360U1T4G
Ultra Librarian 3D Model Ultra Librarian NDD60N360U1T4G CAD Model

Description

Introducing the NDD60N360U1T4G Power MOSFET by ON Semiconductor

The NDD60N360U1T4G is a high-performance, N-channel power MOSFET designed and manufactured by ON Semiconductor, a leading figure in the semiconductor industry. This robust component is engineered to meet the demanding requirements of modern electronic applications, offering high efficiency, reliability, and power density.

Key Features

  • High Current Capability: With a continuous drain current (Id) rating of 60A, this MOSFET can handle significant power loads, making it suitable for high-power applications.
  • Low On-Resistance (Rds(on)): The device boasts an ultra-low on-resistance of 360 mOhms at 10V, ensuring minimal power loss and heat generation during operation.
  • High Voltage Tolerance: With a drain-to-source voltage (Vds) of 600V, it provides a wide safety margin for applications that may experience voltage spikes or surges.
  • Fast Switching Speed: Designed for rapid switching, the MOSFET improves efficiency in applications where switching losses can be critical.
  • Robust Body Diode: Features a strong and fast body diode, which is essential for handling high-speed inductive loads and providing reverse current protection.
  • Enhanced Thermal Performance: The TO-252 (DPAK) package offers excellent thermal performance, ensuring the device operates within safe temperature ranges even under high current conditions.

Applications

The NDD60N360U1T4G is suitable for a broad range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Lighting systems
  • Automotive electronics
  • High-power switching applications

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NDD60N360U1T4G is no exception, as it undergoes rigorous testing and quality assurance processes to ensure it meets the needs of even the most demanding applications. With its combination of performance, efficiency, and durability, this MOSFET is an excellent choice for designers looking to optimize their power management systems.

Whether you're designing power supplies, motor controllers, or any other high-performance power electronics, the NDD60N360U1T4G offers the features and reliability that engineers need to create efficient, robust designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3636 $54.5440
90+ $1.1189 $100.7010
140+ $1.0839 $151.7460
195+ $1.0490 $204.5550
250+ $1.0140 $253.5000
330+ $0.9091 $300.0030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,508 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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