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NDF05N50ZH

Part No NDF05N50ZH
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 632pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1082834-NDF05N50ZH
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDF05N50ZH CAD Model

Description

ON Semiconductor NDF05N50ZH MOSFET

The NDF05N50ZH from ON Semiconductor is a high-performance N-channel Power MOSFET that stands out for its efficiency and reliability in various applications. Designed with state-of-the-art technology, this MOSFET is an ideal choice for power management tasks where low on-resistance and high blocking voltage are essential.

With a drain-to-source voltage (Vdss) of 500V, the NDF05N50ZH is well-suited for high voltage applications, ensuring that it can handle significant voltages without compromising performance. The device also features a continuous drain current (Id) of 4.5A at 25°C, which allows it to drive considerable currents, making it perfect for power conversion and switching applications.

The RDS(on) of this MOSFET is as low as 1.7 Ohm, which indicates very low resistance during operation, resulting in higher efficiency and reduced heat generation. This characteristic is particularly important in applications where power loss and thermal management are critical considerations.

The NDF05N50ZH also boasts a low gate charge (Qg) that facilitates faster switching speeds, which is beneficial for applications requiring high-speed switching performance. The total gate charge is just 15 nC, providing designers with a component that responds swiftly to drive signals, thereby improving the overall responsiveness of the system.

ON Semiconductor has packaged the NDF05N50ZH in a TO-220F package, which is known for its robustness and ease of mounting on a printed circuit board (PCB). The package is designed to offer excellent thermal and electrical characteristics, ensuring that the MOSFET operates reliably even under stressful conditions.

Applications that can benefit from the NDF05N50ZH MOSFET include switch mode power supplies (SMPS), power factor correction (PFC) circuits, lighting ballasts, and other power conversion systems. Its ability to handle high voltages and currents with low losses makes it an excellent choice for designers looking to optimize their power systems for efficiency and reliability.

In summary, the NDF05N50ZH from ON Semiconductor is a powerful and reliable component that offers an excellent balance of high-voltage capability, low on-resistance, and fast switching performance, packaged in a durable and easy-to-use format.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5181 $59.5815
275+ $0.4250 $116.8750
425+ $0.4118 $175.0150
580+ $0.3985 $231.1300
750+ $0.3852 $288.9000
1,005+ $0.3453 $347.0265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,010 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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