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NDF10N60ZH

Part No NDF10N60ZH
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1645pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1082838-NDF10N60ZH
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDF10N60ZH CAD Model

Description

The ON Semiconductor NDF10N60ZH is a high-performance N-Channel MOSFET that offers a robust and efficient solution for a wide range of power management applications. This device is designed to handle high levels of current and voltage, making it an ideal choice for power supply circuits, motor control systems, and various types of converters.

Key Features

  • High Current Capability: The NDF10N60ZH is capable of conducting a continuous drain current of up to 10A, which allows it to handle significant power loads with ease.
  • High Voltage Threshold: With a maximum drain-source voltage (Vds) of 600V, this MOSFET can be employed in circuits that experience high voltage levels, providing reliable operation and protection against voltage spikes.
  • Low On-Resistance: The low on-resistance (Rds(on)) of this device minimizes conduction losses, leading to improved energy efficiency and thermal performance in applications.
  • Fast Switching Speed: The NDF10N60ZH features fast switching characteristics, which reduce switching losses and enhance performance in high-frequency applications.
  • Enhanced Body Diode: The integrated body diode with low reverse recovery time helps to reduce losses during the diode's conduction state in applications such as synchronous rectification.

Applications

The versatility of the NDF10N60ZH MOSFET makes it suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Drives
  • Lighting Systems
  • Uninterruptible Power Supplies (UPS)

Reliability and Packaging

The NDF10N60ZH is encapsulated in a TO-220F package, which provides excellent thermal properties and is suitable for through-hole mounting. ON Semiconductor's commitment to quality ensures that this MOSFET meets the stringent reliability standards required for industrial and commercial applications.

With its combination of high performance, efficiency, and reliability, the ON Semiconductor NDF10N60ZH MOSFET represents a superior choice for designers seeking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,400 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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