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NSVMMBT2907AM3T5G

Part No NSVMMBT2907AM3T5G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 60V 0.6A SOT723  /  Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 640 mW Surface Mount SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 640 mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package SOT-723
Base Product Number NSVMMBT2907
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 488-NSVMMBT2907AM3T5GDKR,NSVMMBT2907AM3T5G-ND,488-NSVMMBT2907AM3T5GTR,488-NSVMMBT2907AM3T5GCT
Standard Package 8,000
Win Source Part Number 1107795-NSVMMBT2907AM3T5G
Ultra Librarian 3D Model Ultra Librarian NSVMMBT2907AM3T5G CAD Model

Description

ON Semiconductor NSVMMBT2907AM3T5G - PNP Bipolar Transistor

The NSVMMBT2907AM3T5G is a high-performance PNP bipolar transistor from ON Semiconductor, a company renowned for its innovative and reliable semiconductor solutions. This versatile component is designed to meet the stringent requirements of a wide range of electronic applications, making it a popular choice among engineers and designers in the industry.

Key Features

  • Device Type: PNP Bipolar Transistor
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 600 mA
  • Power Dissipation (Pd): 225 mW
  • DC Current Gain (hFE): 100 to 300 at 10 mA, 1V
  • Transition Frequency (fT): 200 MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The NSVMMBT2907AM3T5G is particularly suitable for use in switching and amplification applications. Its high current gain and fast switching speeds make it an ideal choice for a variety of circuits, including:

  • Signal processing
  • Power management
  • Linear amplification
  • Switching regulators
  • Driver circuits

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NSVMMBT2907AM3T5G is manufactured using robust silicon technology, ensuring stable performance under varying conditions and throughout its lifespan. It is also housed in a SOT-23 package, which offers a compact footprint for space-constrained applications.

Environmental Compliance

The NSVMMBT2907AM3T5G complies with RoHS (Restriction of Hazardous Substances) directives, which means it is free from harmful substances such as lead, mercury, and cadmium. This compliance not only ensures the safety of users but also reflects ON Semiconductor's commitment to environmental sustainability.

In summary, the NSVMMBT2907AM3T5G from ON Semiconductor is a reliable and efficient PNP bipolar transistor that offers excellent performance for a variety of electronic applications. Its robust design, combined with ON Semiconductor's commitment to quality, makes it a smart choice for engineers looking to enhance their designs with a dependable semiconductor component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
560+ $0.0897 $50.2320
1,195+ $0.0840 $100.3800
1,850+ $0.0811 $150.0350
2,660+ $0.0753 $200.2980
3,455+ $0.0724 $250.1420
4,320+ $0.0695 $300.2400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,860 pieces
MOQ: 560 pcs
Order Increment : 1 pcs
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