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Same model may have multiple batches, images only for reference.
IPB80N06S205ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N06S205ATMA1

Part No IPB80N06S205ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO263-3
Datasheet
IPB80N06S205ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 5110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045825-IPB80N06S205ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S205ATMA1 CAD Model

Description

The N-channel MOSFET from Infineon Technologies is a high-performance power MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 80A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Power Dissipation: Up to 300W (Tc)
  • Drive Voltage: 10V
  • Package: PG-TO263-3-2
  • Case Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 170nC @ 10V
  • Application: Discrete semiconductor products

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29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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MOQ: 12 pcs
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