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NTB52N10G

Part No NTB52N10G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 52A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 3150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 178W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 025747-NTB52N10G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTB52N10G CAD Model

Description

Introducing the NTB52N10G Power MOSFET by ON Semiconductor

The NTB52N10G is a state-of-the-art Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This robust transistor is engineered to meet the high-performance requirements of modern electronic applications, providing a perfect blend of low on-resistance and high switching speed.

Key Features

  • High Current Capacity: The NTB52N10G boasts an impressive continuous drain current of 52A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) value of just 10mΩ, this MOSFET ensures minimal power loss and improved efficiency, which is crucial for energy-sensitive designs.
  • High Switching Speed: The fast switching capability of this device makes it an ideal choice for high-frequency power switching applications.
  • Robust Thermal Performance: The NTB52N10G is encapsulated in a TO-263 package, which offers excellent thermal conduction and heat dissipation, ensuring reliable operation under varying conditions.
  • Voltage Rating: This MOSFET can handle drain-to-source voltages up to 100V, providing a wide safety margin for most power applications.

Applications

The ON Semiconductor NTB52N10G is incredibly versatile and can be used in a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching regulators
  • Power management solutions

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability. The NTB52N10G MOSFET is no exception, and it is designed to meet or exceed the rigorous demands of the industry. Users can trust in the durability and performance of this component, even in the most challenging environments.

Whether you are designing power supplies, working on automotive electronics, or developing high-efficiency power management systems, the NTB52N10G from ON Semiconductor is a reliable and efficient solution that will help you achieve your design goals with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3678 $59.1950
60+ $1.9427 $116.5620
93+ $1.8827 $175.0911
127+ $1.8214 $231.3178
165+ $1.7602 $290.4330
220+ $1.5789 $347.3580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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